Title:
ガスセンサ
Document Type and Number:
Japanese Patent JP6740949
Kind Code:
B2
Abstract:
A sensor element includes a sensor FET provided in a main surface of a semiconductor substrate, a cavity provided in the sensor FET and into which a detection target gas is introduced, and an ion pump provided over the cavity. By laminating the ion pump over the sensor FET via the cavity, a part of a front surface of a gate layer is exposed to the cavity, and a part of a lower surface of an ion pump electrode is exposed to the cavity. When the gate layer comes into contact with the detection target gas, a work function changes, so that gas concentration can be detected.
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Inventors:
Yoshitaka Sasako
Shuntaro Machida
Hitoshi Nakamura
Takahiro Odaka
Shuntaro Machida
Hitoshi Nakamura
Takahiro Odaka
Application Number:
JP2017070864A
Publication Date:
August 19, 2020
Filing Date:
March 31, 2017
Export Citation:
Assignee:
Hitachi Metals Co., Ltd.
International Classes:
G01N27/00; G01N27/22
Domestic Patent References:
| JP2005142346A | ||||
| JP9033467A | ||||
| JP2016502644A | ||||
| JP2002333429A |
Attorney, Agent or Firm:
Tsutsui International Patent Office