Title:
シリコンフレークを含む負極材及びシリコンフレークの製造方法
Document Type and Number:
Japanese Patent JP6750038
Kind Code:
B2
Abstract:
The present disclosure relates to a negative electrode material including, as an active material, silicon flakes with a hyperporous structure, represented by the following chemical formula 1:
xSi·(1-x)A(1)
where 0.5¤ x ¤1.0, and
A is an impurity, and includes at least one compound selected from the group consisting of Al 2 O 3 , MgO, SiO 2 , GeO 2 , Fe 2 O 3 , CaO, TiO 2 , Na 2 O K 2 O, CuO, ZnO, NiO, Zr 2 O 3 , Cr 2 O 3 and BaO, and a preparing method of the silicon flakes.
Inventors:
Wei Young Fan
Soo Jin Park
Choi Gong Ryu
Chang-Bae Kim
Jeong-Hyun Choi
Don-Ki Hong
Soo Jin Park
Choi Gong Ryu
Chang-Bae Kim
Jeong-Hyun Choi
Don-Ki Hong
Application Number:
JP2018556966A
Publication Date:
September 02, 2020
Filing Date:
August 18, 2017
Export Citation:
Assignee:
LG HAUSYS,LTD.
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
International Classes:
C01B33/033; H01M4/38; H01M4/36
Domestic Patent References:
JP2014513385A | ||||
JP2015525189A | ||||
JP2014525651A | ||||
JP2015524993A |
Foreign References:
WO2014102219A1 | ||||
US20130045420 | ||||
US20150104705 | ||||
US20140147751 | ||||
WO2015196092A1 |
Attorney, Agent or Firm:
Shinya Mitsuhiro
Takashi Watanabe
Takashi Watanabe