Title:
半導体素子の駆動装置および電力変換装置
Document Type and Number:
Japanese Patent JP6758486
Kind Code:
B2
Abstract:
This semiconductor element drive device, by means of a power recovery function, reduces energy necessary for driving a gate, and prevents generation of a large current associated with arm short-circuiting, etc. A control circuit (150) executes short-circuiting protection control when generation of a short-circuit path associated with turning-on of a semiconductor element (10) is detected by a short-circuiting detection unit (160) during an on-period of a switching element (SW1) for turning the semiconductor element (10) on. In the short-circuiting protection control, periods for turning a switching element (SW4) on and for turning the switching element (SW1) off for cutting off the gate of the semiconductor element (10) and a DC power source (110), are provided. By turning the switching element (SW4) on, a current path through which the current flowing through a reactor (Lr) bypasses the gate, and a second path for discharging the gate, are formed.
Inventors:
Kohei Onda
Ryota Kondo
Yohei Tan
Hiroyasu Iwabata
Ryota Kondo
Yohei Tan
Hiroyasu Iwabata
Application Number:
JP2019516357A
Publication Date:
September 23, 2020
Filing Date:
October 16, 2017
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H02M1/08; H02M1/38; H02M3/155; H02M7/48
Domestic Patent References:
| JP200654954A | ||||
| JP10337000A | ||||
| JP2015154701A | ||||
| JP2006230166A |
Attorney, Agent or Firm:
Fukami patent office