Title:
成膜方法
Document Type and Number:
Japanese Patent JP6762207
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition method capable of depositing a carbon film at high productivity, while suppressing adhesion of foreign substances to a material on which the film is deposited.SOLUTION: A target 31 made of carbon, adhesion preventive plates 5u, 5d for preventing sputtered particles from adhering to the internal surface of a vacuum chamber 1, and a material S on which a film is deposited are arranged in the vacuum chamber 1. In a film deposition method, a rare gas is introduced in the vacuum chamber as a sputtering gas and sputtering is practiced by supplying power to the target to deposit a carbon film on the surface of the material S and the adhesion preventive plates. The method includes a process to form a carbon nitride layer by introducing a nitrogen-containing gas as another sputtering gas together with the rare gas during the film deposition processing to the plurality of materials.SELECTED DRAWING: Figure 1
Inventors:
Yoshiji Fujii
Shinya Nakamura
Shinya Nakamura
Application Number:
JP2016226639A
Publication Date:
September 30, 2020
Filing Date:
November 22, 2016
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
C23C14/00; C23C14/06
Domestic Patent References:
| JP7192259A | ||||
| JP8158040A | ||||
| JP2003160854A |
Attorney, Agent or Firm:
Seiryu Corporation