Title:
ＣＭＰ装置
Document Type and Number:
Japanese Patent JP6770910
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a CMP device capable of conveniently setting an appropriate polishing condition according to variations in initial film thickness of a wafer and a wafer shape after polishing.SOLUTION: A wafer polishing device 1 calculates an approximate expression indicating the relationship between reference polishing rate ratios r1 to r5 obtained by respectively dividing polishing rates of zones Z1 to Z5 at the time of polishing a dummy wafer by the entire polishing rate of a polishing head 4 and reference polishing rate ratios p1 to p5 of the zones Z1 to Z5 at the time of polishing the dummy wafer for each of the zones Z1 to Z5, calculates a target polishing rate ratio obtained by dividing a desired polishing amount of the zone Z1 to Z5 with respect to the wafer W by the sum of the products of the desired polishing amount of the zone Z1 to Z5 and the area ratio of the zones Z1 to Z5, and calculates target pressures P1 to P5 to be introduced into the zones Z1 to Z5 on the basis of the approximate expression and the target polishing rate ratio.SELECTED DRAWING: Figure 1
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Inventors:
Shugo Yokota
Satoshi Hasegawa
Yamada Soushi
Satoshi Hasegawa
Yamada Soushi
Application Number:
JP2017027013A
Publication Date:
October 21, 2020
Filing Date:
February 16, 2017
Export Citation:
Assignee:
Tokyo Seimitsu Co., Ltd.
International Classes:
H01L21/304; B24B37/005
Domestic Patent References:
| JP2008528300A | ||||
| JP2007048862A | ||||
| JP2006043873A |
Attorney, Agent or Firm:
Takamitsu Shimizu