Title:
ＧａＮ単結晶およびＧａＮ単結晶製造方法
Document Type and Number:
Japanese Patent JP6776711
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a new GaN single crystal having improved quality, and a method for manufacturing the same.SOLUTION: A circular C plane GaN wafer has a gallium polar surface 11 served as a main surface on one side and a nitrogen polar surface 12 served as a main surface on the opposite side. When at least a first line segment being a virtual line segment having a length of 40 mm is drawn on at least one of the main surfaces 11 and 12, (A1) the maximum value of FWHM of XRC among all measurement points is less than 40 arcsec when an X ray incident surface is parallel to the first line segment when each ω scanning on the first line segment and the XRC of (002) reflection is measured at an interval of 0.2 mm, and (B1) a difference between the maximum value and minimum value of peak angles of the XRC among all measurement points is less than 0.2° when the X ray incident surface is parallel to the first line segment when each ω scanning on the first line segment and the XRC of the (002) reflection is measured at an interval of 0.2 mm.SELECTED DRAWING: Figure 1
Inventors:
Hideo Fujisawa
Mikawa Yutaka
Shinichiro Kawabata
Hideo Namita
Mochizuki Tae
Mikawa Yutaka
Shinichiro Kawabata
Hideo Namita
Mochizuki Tae
Application Number:
JP2016155960A
Publication Date:
October 28, 2020
Filing Date:
August 08, 2016
Export Citation:
Assignee:
Mitsubishi Chemical Corporation
International Classes:
C30B29/38
Domestic Patent References:
| JP2014111527A | ||||
| JP201151849A | ||||
| JP2006290676A | ||||
| JP2007254258A |
Attorney, Agent or Firm:
Yoshiyuki Kawaguchi
Shinichi Sanuki
Takeshi Niwa
Toshiaki Shimoda
Shinichi Sanuki
Takeshi Niwa
Toshiaki Shimoda