Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP6785057
Kind Code:
B2
Abstract:
There is to provide a semiconductor device including a light receiving element capable of reducing the manufacturing cost and improving the optical performance of the light receiving element. For example, a p type germanium layer, an intrinsic germanium layer, and an n type germanium layer forming the structure body of a Ge photodiode are formed according to a continuous selective epitaxial growth. An insulating film having an opening portion is formed on the silicon layer of a SOI substrate, and an intrinsic germanium layer is formed bulging from the opening portion to above the insulating film. In short, by using the insulating film having the opening portion, the cross section of the intrinsic germanium layer is formed into a mushroom shape.
Inventors:
Tatsuya Usami
Application Number:
JP2016092400A
Publication Date:
November 18, 2020
Filing Date:
May 02, 2016
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L31/10; G02B6/12; H01L31/0232
Domestic Patent References:
| JP2011091354A | ||||
| JP2010536170A | ||||
| JP2008546181A |
Foreign References:
| WO2013121926A1 | ||||
| US7871854 |
Attorney, Agent or Firm:
Tsutsui International Patent Office