Title:
膜堆積のためのパルス化されたプラズマ
Document Type and Number:
Japanese Patent JP6789966
Kind Code:
B2
Abstract:
Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.
Inventors:
Shwe, Chun
Godet, Ludovik
Nemani, Shrinivers
Stowell, Michael W.
Liang, Chi-way
Buchberger, Douglas A., Juniors
Godet, Ludovik
Nemani, Shrinivers
Stowell, Michael W.
Liang, Chi-way
Buchberger, Douglas A., Juniors
Application Number:
JP2017548969A
Publication Date:
December 02, 2020
Filing Date:
March 17, 2016
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/515; C23C16/42; C23C16/517; H01L21/318
Domestic Patent References:
| JP2010530127A | ||||
| JP9192479A | ||||
| JP2002043225A |
Foreign References:
| US20150140836 | ||||
| US6689220 | ||||
| US20120196048 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation