Title:
気相成長装置、及び、気相成長方法
Document Type and Number:
Japanese Patent JP6792083
Kind Code:
B2
Abstract:
A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holding unit being provided in the reaction chamber, a substrate capable of being mounted on the substrate holding unit, the substrate holding unit having a holding wall capable holding an outer periphery of the substrate with a predetermined gap; a process gas supply unit being provided above the reaction chamber, the process gas supply unit having a first region capable of supplying a first process gas to the reaction chamber and a second region being provided around the first region and being capable of supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas to the reaction chamber, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall being provided to a region between the process gas supply unit and the substrate holding unit in the reaction chamber, an inner peripheral diameter being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater provided below the substrate holding unit; a second heater provided between the sidewall and an inner wall of the reaction chamber; and a rotation drive unit rotating the substrate holding unit.
Inventors:
Daigo Yoshiaki
Akio Ishiguro
Hideki Ito
Akio Ishiguro
Hideki Ito
Application Number:
JP2019539147A
Publication Date:
November 25, 2020
Filing Date:
August 08, 2018
Export Citation:
Assignee:
New Flare Technology Co., Ltd.
International Classes:
H01L21/205; C23C16/42; C30B25/20; C30B29/36
Domestic Patent References:
| JP2013128086A | ||||
| JP2010037157A | ||||
| JP2012069904A | ||||
| JP2015005658A | ||||
| JP2015073000A |
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Masahiro Takashita
Akira Sudo
Masahiro Takashita