Title:
レジストパターン形成方法
Document Type and Number:
Japanese Patent JP6796416
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern by which a finer pattern can be formed.SOLUTION: The method for forming a resist pattern comprises: a step of forming a resist prepattern 2 having a polar group exposed on a surface 2a thereof on a support body 1; a step of forming a polymer film 3 by applying a polymer composition for thickening a resist pattern on the support 1 where the resist prepattern 2 is formed so as to cover the resist prepattern 2; a step of forming a developer-insoluble layer 3a on the surface 2a of the resist prepattern 2; and a step of forming a resist pattern 4 obtained by thickening the resist prepattern 2 by developing the resist prepattern 2 having the developer-insoluble layer 3a formed thereon and the polymer film 3 covering the same by use of a developer. The polymer composition for thickening a resist pattern used comprises a resin component (X) having a function of thickening the resist prepattern 2 and has a dissolution rate of less than 5000 nm/sec in the developer.SELECTED DRAWING: Figure 1
Inventors:
Takataka Mori
Yoichi Hori
Sunamichi Tomonari
Yoichi Hori
Sunamichi Tomonari
Application Number:
JP2016136411A
Publication Date:
December 09, 2020
Filing Date:
July 08, 2016
Export Citation:
Assignee:
Tokyo Ohka Kogyo Co., Ltd.
International Classes:
G03F7/40; C08F212/08; C08F220/34; G03F7/20; H01L21/027
Domestic Patent References:
| JP2015180920A | ||||
| JP2016108525A | ||||
| JP2017016104A |
Attorney, Agent or Firm:
Sumio Tanai
Masatake Shiga
Matsumoto
Ryu Miyamoto
Masato Iida
Masatake Shiga
Matsumoto
Ryu Miyamoto
Masato Iida