Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6798418
Kind Code:
B2
Abstract:
To provide a method of manufacturing a semiconductor device capable of performing required inspections, and suppressing progress of cracks or chipping generated on a semiconductor wafer.SOLUTION: A method of manufacturing a semiconductor device includes: a grinding step of grinding a lower surface of a semiconductor wafer on whose upper surface side a plurality of semiconductor elements are formed; an inspection step of inspecting the semiconductor elements after the grinding step; and an application step of applying a resin composition to an end part of a crack of the semiconductor wafer or an intersection point part of a plurality of cracks after the grinding step and before or after the inspection step.SELECTED DRAWING: Figure 1
Inventors:
Yasuhiro Matsuo
Application Number:
JP2017098465A
Publication Date:
December 09, 2020
Filing Date:
May 17, 2017
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/304; B24B7/20; B24B9/00; H01L21/301
Domestic Patent References:
| JP2014049664A | ||||
| JP2011047782A | ||||
| JP2013197248A | ||||
| JP2002043251A |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Yoshimi Kuno
Hideki Takahashi
Yoshimi Kuno