有機フォトダイオード中の有機光電変換層のためのＮおよびＰ活性材料

Title:

有機フォトダイオード中の有機光電変換層のためのＮおよびＰ活性材料

Document Type and Number:

Japanese Patent JP6801669

Kind Code:

B2

Abstract:

The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to transparent N materials and/or to transparent P materials and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

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Inventors:

Rosselli Silvia
Zenka Miteva
Daichmann Vito
Danner David
Ford william
Chelska dennis
Yakutkin Vladimir
Scherrer Lars
Knorr Nikolaus
Niels Gabriel

Application Number:

JP2017551635A

Publication Date:

December 16, 2020

Filing Date:

March 31, 2016

Export Citation:

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Assignee:

ソニー株式会社

International Classes:

H01L51/42; H01L27/146; H01L27/30; H01L29/786; H01L51/46

Domestic Patent References:

JP2009099866A
JP2010254608A
JP2010093181A
JP2014179537A

Foreign References:

US20150051398
WO2014097079A1
US8822980
US20140213789
US7569693
US8309394
US20130324723
EP2498315A2
US20110308592
WO2010006698A1
WO2012142460A1

Attorney, Agent or Firm:

Junichi Omori
Mitsuru Takahashi
Teppei Nakamura
Ori Akira
Masayoshi Sekine
Ayako Kaneko
Shintaro Kanayama
Chiba Ayako
Shiraka Tomohisa

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