Title:
ＡＬＤ法およびＡＬＤ装置
Document Type and Number:
Japanese Patent JP6814136
Kind Code:
B2
Abstract:
A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.
Inventors:
Marinen Timo
Costamo Yuhana
Lee Way-Min
Pilvi Terror
Costamo Yuhana
Lee Way-Min
Pilvi Terror
Application Number:
JP2017529021A
Publication Date:
January 13, 2021
Filing Date:
November 25, 2015
Export Citation:
Assignee:
PICOSUN OY
International Classes:
C23C16/455; H01L21/31; H01L21/316
Domestic Patent References:
| JP2006229207A | ||||
| JP2013211551A | ||||
| JP2015525298A | ||||
| JP2005310927A |
Foreign References:
| WO2013112727A1 |
Attorney, Agent or Firm:
Kawamori Mitsunori