Title:
半導体装置およびパワーモジュール
Document Type and Number:
Japanese Patent JP6826499
Kind Code:
B2
Abstract:
The junction temperature of a field effect transistor is detected with a higher degree of accuracy than in the past. A semiconductor device controls multiple field effect transistors that configure a power conversion device, and includes a differential amplifier and a controller that controls ON/OFF of the multiple field effect transistors. The differential amplifier detects the potential difference between a source and a drain of a field effect transistor that is controlled in the OFF state by the controller and that induces an electric current flowing through the body diode thereof, among the multiple field effect transistors.
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Inventors:
Satoshi Narumi
Application Number:
JP2017129113A
Publication Date:
February 03, 2021
Filing Date:
June 30, 2017
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H02M7/48; H03K17/14
Domestic Patent References:
| JP2005168262A | ||||
| JP200922086A | ||||
| JP2016208770A | ||||
| JP200145765A |
Attorney, Agent or Firm:
Fukami patent office