Title:
導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物
Document Type and Number:
Japanese Patent JP6830587
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide: a conductive film-attached columnar ingot substrate superior in adhesion between a conductive film and a columnar ingot substrate; a method for manufacturing the conductive film-attached columnar ingot substrate; a silicide-based thermoelectric conversion element cut from the conductive film-attached columnar ingot substrate; a method for manufacturing the silicide-based thermoelectric conversion element; a thermoelectric conversion module including the silicide-based thermoelectric conversion element; and a composition for forming an electrode layer of the silicide-based thermoelectric conversion element.SOLUTION: A conductive film-attached columnar ingot substrate to be used to cut from a plurality of thermoelectric conversion elements comprises: a columnar ingot substrate made of a silicide-based thermoelectric conversion material; and a conductive film provided on one or each of opposing faces of the columnar ingot substrate, and including a boron oxide.SELECTED DRAWING: None
Inventors:
Tsutomu Iida
Nana Ishida
Katsuyuki Isotani
Takashi Kobayashi
Akira Kosugi
Ayumu Sato
Shoichi Kobayashi
Ryusuke Ueyama
Shinsuke Matsumura
Nana Ishida
Katsuyuki Isotani
Takashi Kobayashi
Akira Kosugi
Ayumu Sato
Shoichi Kobayashi
Ryusuke Ueyama
Shinsuke Matsumura
Application Number:
JP2016078899A
Publication Date:
February 17, 2021
Filing Date:
April 11, 2016
Export Citation:
Assignee:
Tokyo University of Science
Naoetsu Electronics Industry Co., Ltd.
Daiken Chemical Industry Co., Ltd.
Naoetsu Electronics Industry Co., Ltd.
Daiken Chemical Industry Co., Ltd.
International Classes:
H01L35/14; C04B35/58; C22C1/04; C22C1/05; H01L35/34
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Foreign References:
| WO2015174462A1 | ||||
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Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda
Kato Kazunori
Hiroshi Fukuda