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Title:
半導体材料および半導体材料用のナフトフランマトリクス化合物
Document Type and Number:
Japanese Patent JP6845799
Kind Code:
B2
Abstract:
The present invention relates to a semiconducting material comprising an electron transport matrix compound comprising at least one electron transporting structural moiety and at least one polar structural moiety; a matrix compound and electronic device utilizing the semiconducting material.

Inventors:
Fly, Julien
Steider, Annette
Application Number:
JP2017542908A
Publication Date:
March 24, 2021
Filing Date:
February 18, 2016
Export Citation:
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Assignee:
Novaled Gamebha
International Classes:
H01L51/50; C07D405/10; C07D405/14; C07F9/6561
Domestic Patent References:
JP2012503027A
JP2013543250A
Foreign References:
WO2012070226A1
US20140323723
US20140117331
WO2013118507A1
US20160079546
US20150243908
KR1020160041822A
US20160133857
WO2013079678A1
Attorney, Agent or Firm:
Harakenzo world patent & trademark