Title:
ゲッタリング層形成方法
Document Type and Number:
Japanese Patent JP6855124
Kind Code:
B2
Abstract:
A gettering layer forming method includes a coating step of applying a solution of metal salt to a back side of a wafer, and a drying step of drying the wafer after performing the coating step, thereby forming a gettering layer containing the metal salt on the back side of the wafer.
More Like This:
| JPS5588338 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
| WO/2022/059488 | METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR WAFER |
| WO/2006/130914 | A PATTERNING PROCESS |
Inventors:
Haruji Harada
Application Number:
JP2017092456A
Publication Date:
April 07, 2021
Filing Date:
May 08, 2017
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/322
Domestic Patent References:
| JP44025292B1 | ||||
| JP10284453A | ||||
| JP2011100996A | ||||
| JP2015130397A | ||||
| JP43009092B1 | ||||
| JP2009283929A | ||||
| JP2004214507A |
Attorney, Agent or Firm:
Akira Matsumoto
Tomohiro Okamoto
Kasahara Takahiro
Tomohiro Okamoto
Kasahara Takahiro