Title:
磁気メモリ
Document Type and Number:
Japanese Patent JP6881148
Kind Code:
B2
Abstract:
Provided is a magnetic memory including: a first bit line, a second bit line, and a third bit line; a word line; a first magnetoresistance effect element; a first transistor; a second magnetoresistance effect element; and a second transistor, wherein free layers of the first and second magnetoresistance effect elements and the second bit line are connected, a fixed layer of the first magnetoresistance effect element and a source terminal of the first transistor are connected, a drain terminal of the first transistor and the first bit line are connected, a fixed layer of the second magnetoresistance effect element and a drain terminal of the second transistor are connected, a source terminal of the second transistor and the third bit line are connected, and the word line is connected to each of a gate terminal of the first transistor and a gate terminal of the second transistor.
Inventors:
Yuji Kakinuma
Atsushi Tameda
Atsushi Tameda
Application Number:
JP2017155861A
Publication Date:
June 02, 2021
Filing Date:
August 10, 2017
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01L21/8239; G11C11/16; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
| JP2017112351A | ||||
| JP2017510016A |
Attorney, Agent or Firm:
Sumio Tanai
Norihiko Ara
Masato Iida
Akihiro Ogino
Norihiko Ara
Masato Iida
Akihiro Ogino