Title:
三次元（３Ｄ）メモリ構造および方法
Document Type and Number:
Japanese Patent JP6883665
Kind Code:
B2
Abstract:
Embodiments of three-dimensional (3D) memory devices and methods for controlling a photoresist (PR) trimming rate in the formation of the 3D memory devices are disclosed. In an example, a method includes forming a dielectric stack over a substrate, measuring a first distance between the first trimming mark and the PR layer along a first direction, and trimming the PR layer along the first direction. The method also includes etching the dielectric stack using the trimmed PR layer as an etch mask to form a staircase, forming a second trimming mark using the first trimming mark as an etch mask, measuring a second distance between the second trimming mark and the trimmed PR layer, comparing the first distance with the second distance to determine a difference between an actual PR trimming rate and an estimated PR trimming rate, and adjusting PR trimming parameters based on the difference.
Inventors:
Le Zenyu
Song Redon
Li Youngna
Pan Feng
Dai Xiao Wan
Liu Dun
Yan Steve Wayy
Yang Simon Si-nin
Song Redon
Li Youngna
Pan Feng
Dai Xiao Wan
Liu Dun
Yan Steve Wayy
Yang Simon Si-nin
Application Number:
JP2019548947A
Publication Date:
June 09, 2021
Filing Date:
March 02, 2018
Export Citation:
Assignee:
Yangtze Memory Technologies Co.,Ltd.
International Classes:
H01L27/11575; H01L21/336; H01L27/11548; H01L27/11556; H01L27/11582; H01L29/788; H01L29/792
Foreign References:
| US20160260643 | ||||
| US20150263029 |
Attorney, Agent or Firm:
Hiromori Arai