Title:
超硬質半導体アモルファスカーボンバルク材及びその調製方法
Document Type and Number:
Japanese Patent JP6886204
Kind Code:
B2
Abstract:
To provide a superhard semiconductor amorphous carbon block material, and to provide a preparation method thereof.SOLUTION: A method includes the following steps: (1) prefabricating Cfullerene into a columnar blank body; (2) loading the obtained columnar preform into a hexagonal boron nitride crucible, and then loading into a high-temperature high-pressure assembly block; (3) placing the assembly block in high-temperature and high-pressure synthesis equipment for high-temperature and high-pressure treatment; and (4) acquiring a superhard semiconductor amorphous carbon block material after the treatment is completed. According to the preparation method of the superhard semiconductor amorphous carbon block material, the Cfullerene powder is taken as a raw material, a high temperature and high pressure test is utilized, a phase change behavior of the Cfullerene under high pressure is explored by regulating a relationship between temperature and pressure, and the amorphous carbon block material with high hardness or superhard hardness, compactness and semiconductor properties is synthesized, so that the material has a wide application prospect.SELECTED DRAWING: None
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Inventors:
Chao Cheation
Chang shore shore
Luo Khun
Khao Yufei
Ho Chuiron
Yui Tonley
Fu Wentao
Thien Yong Chun
Shui Po
Chang shore shore
Luo Khun
Khao Yufei
Ho Chuiron
Yui Tonley
Fu Wentao
Thien Yong Chun
Shui Po
Application Number:
JP2020009244A
Publication Date:
June 16, 2021
Filing Date:
January 23, 2020
Export Citation:
Assignee:
YANSHAN UNIVERSITY
International Classes:
C01B32/05; B01J3/06
Domestic Patent References:
| JP8217429A | ||||
| JP2002524376A | ||||
| JP2016087481A | ||||
| JP2015529611A | ||||
| JP11292630A |
Attorney, Agent or Firm:
Washeda International Patent Office