Title:
イオンビーム装置
Document Type and Number:
Japanese Patent JP6894486
Kind Code:
B2
Abstract:
To provide an ion beam device having a gas field ion source capable of obtaining a large current sufficient for processing and stabilizing an ion beam current.SOLUTION: An ion beam device includes: a gas field ion source having a vacuum vessel 15, an emitter tip holder 35 provided in the vacuum vessel, an emitter tip 21 connected to the emitter tip holder, a lead electrode 24 provided so as to face the emitter tip, a gas supply unit that supplies gas to the emitter tip, and a cold heat transfer member 33 that transmits cold to the emitter tip holder inside the vacuum vessel; and at least two temperature controllers for the emitter tip holder 35 and the cold heat transfer member 33. The gas supply unit supplies at least an argon gas. The emitter tip is kept at 45 K or less.SELECTED DRAWING: Figure 1
Inventors:
Hiroyasu Shichi
Shinichi Matsubara
Yoshimi Kawanami
Shinichi Matsubara
Yoshimi Kawanami
Application Number:
JP2019193692A
Publication Date:
June 30, 2021
Filing Date:
October 24, 2019
Export Citation:
Assignee:
Hitachi High-Tech Science Co., Ltd.
International Classes:
H01J27/26
Domestic Patent References:
| JP2010114082A | ||||
| JP2014149920A | ||||
| JP2014191982A | ||||
| JP2016027525A |
Foreign References:
| WO2015053301A1 | ||||
| WO2016084162A1 | ||||
| US20090289185 | ||||
| US20090260112 |
Attorney, Agent or Firm:
Yusuke Hiraki