Title:
単結晶育成方法
Document Type and Number:
Japanese Patent JP6919633
Kind Code:
B2
Abstract:
A method for growing a single crystal according to a Czochralski method (CZ method) or a magnetic field applied CZ method (MCZ method), the method including: a first step of obtaining a melt by melting a silicon raw material loaded in a crucible; a second step of forming a solidified layer by solidifying a part of the melt; a third step of removing at least a part of the melt in a state where the solidified layer and the melt coexist; a fourth step of obtaining a melt by melting the solidified layer; and a fifth step of growing a silicon single crystal from the melt. Consequently, a method for purifying a silicon raw material and growing a single crystal on one CZ pulling apparatus and growing a single crystal with a reduced impurity concentration is provided.
Inventors:
Ryoji Hoshi
Keisuke Mihara
Takayo Sugawara
Matsumoto Katsu
Keisuke Mihara
Takayo Sugawara
Matsumoto Katsu
Application Number:
JP2018160522A
Publication Date:
August 18, 2021
Filing Date:
August 29, 2018
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; C30B15/00
Domestic Patent References:
| JP10279392A | ||||
| JP2008297132A | ||||
| JP2010534614A | ||||
| JP6072792A | ||||
| JP2018070426A | ||||
| JP2008195545A |
Foreign References:
| WO2010018831A1 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi