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Title:
ホール効果検出素子
Document Type and Number:
Japanese Patent JP6934815
Kind Code:
B2
Abstract:
In one aspect, a Hall Effect sensing element includes a Hall plate having a thickness less than about 100 nanometers an adhesion layer directly in contact with the Hall plate and having a thickness in a range about 0.1 nanometers to 5 nanometers. In another aspect, a sensor includes a Hall Effect sensing element. The Hall Effect sensing element includes a substrate that includes one of a semiconductor material or an insulator material, an insulation layer in direct contact with the substrate, an adhesion layer having a thickness in a range of about 0.1 nanometers to 5 nanometers and in direct contact with the insulation layer and a Hall plate in direct contact with the adhesion layer and having a thickness less than about 100 nanometers.

Inventors:
Taylor, William Pea
Won, Haliant
Application Number:
JP2017552474A
Publication Date:
September 15, 2021
Filing Date:
April 01, 2016
Export Citation:
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Assignee:
Allegro Microsystems LRC
International Classes:
H01L43/10; G01R33/07; H01L43/06; H01L43/14
Domestic Patent References:
JP2010515252A
JP2009533869A
JP2013197165A
JP2001326401A
Foreign References:
WO2013051612A1
WO2008123141A1
Attorney, Agent or Firm:
Shinjiro Ono
Osamu Yamamoto
Toru Miyamae
Motoharu Nakanishi
Kenichi Torii