Title:
ＣＭＰ用研磨液及びこれを用いた研磨方法
Document Type and Number:
Japanese Patent JP6938855
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a CMP polishing solution having a high polishing speed even for a wafer having unevenness in a surface.SOLUTION: A CMP polishing solution contains abrasive grains, a first additive and water, and the first additive is a 4-pyrone based compound or 4-pyridone based compound represented by the general formula (1) in the figure, where Xrepresents O or NR, and Xto Xand R each independently represent a hydrogen atom or monovalent substituent.SELECTED DRAWING: Figure 1
Inventors:
Aiko Kino
Takaaki Tanaka
Shingo Kobayashi
Takaaki Tanaka
Shingo Kobayashi
Application Number:
JP2016102148A
Publication Date:
September 22, 2021
Filing Date:
May 23, 2016
Export Citation:
Assignee:
Showa Denko Materials Co., Ltd.
International Classes:
C09K3/14; B24B37/00; H01L21/304
Domestic Patent References:
| JP2011243789A |
Foreign References:
| US20120282775 | ||||
| KR1020140085265A | ||||
| US20110207326 | ||||
| WO2010067844A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshinori Shimizu
Hiroyuki Hirano
Yoshinori Shimizu
Hiroyuki Hirano