Title:
下位構造材料に直接ＲＦ曝露しない共形の気密性誘電体封入のためのＳＩＢＮ膜
Document Type and Number:
Japanese Patent JP7191023
Kind Code:
B2
Abstract:
Embodiments disclosed herein relate to methods for forming memory devices, and more specifically to improved methods for forming a dielectric encapsulation layer over a memory material in a memory device. In one embodiment, the method includes thermally depositing a first material over a memory material at a temperature less than the temperature of the thermal budget of the memory material, exposing the first material to nitrogen plasma to incorporate nitrogen in the first material, and repeating the thermal deposition and nitrogen plasma operations to form a hermetic, conformal dielectric encapsulation layer over the memory material. Thus, a memory device having a hermetic, conformal dielectric encapsulation layer over the memory material is formed.
Inventors:
Gadre, Milind
Mukherjee, Shaunak
Jar, Placket Pea.
Paddy, Dinesh
Toan, Tuchin
Malik, Abhigit Bus
Mukherjee, Shaunak
Jar, Placket Pea.
Paddy, Dinesh
Toan, Tuchin
Malik, Abhigit Bus
Application Number:
JP2019532948A
Publication Date:
December 16, 2022
Filing Date:
November 16, 2017
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/318; C23C16/42
Domestic Patent References:
| JP2010251654A | ||||
| JP2008166594A |
Foreign References:
| US20160148806 | ||||
| WO2016160800A1 |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation