Title:
エピタキシャルシリコンウェーハ及びその製造方法並びにＸ線検出センサ
Document Type and Number:
Japanese Patent JP7192757
Kind Code:
B2
Abstract:
To provide an epitaxy silicon wafer suitable for use in an x-ray detection sensor, a manufacturing method thereof, and an x-ray detection sensor.SOLUTION: In an epitaxy silicon wafer 100 in which first and second silicon epitaxial layers 121 and 122 are sequentially provided on a silicon wafer 110, the formula (1) d1>d3>d2, the formula(2) C3>C2>C1, the formula (3) C3 (d3/10)≥C2 d2 are satisfied (in the formulae (1) to (3), d1, d2, and d3 represent the thickness of the silicon wafer, the first silicon epitaxial layer, and the second silicon epitaxial layer, respectively, and C1, C2, and C3 represent the carrier concentration of the silicon wafer, the first silicon epitaxial layer, and the second silicon epitaxial layer, respectively). The silicon wafer has a resistivity of 100 Ω cm or more, and the oxygen concentration of 5.0×1017 atoms/cm3 or less.SELECTED DRAWING: Figure 1
Inventors:
Yoshiyasu Koga
Application Number:
JP2019229694A
Publication Date:
December 20, 2022
Filing Date:
December 19, 2019
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/20; C23C16/24; C30B25/20; C30B29/06; G01T1/24; H01L21/205; H01L21/8234; H01L27/06; H01L31/0248; H01L31/08; H01L31/10
Domestic Patent References:
| JP2016219833A | ||||
| JP2018032668A | ||||
| JP2019153797A | ||||
| JP6326359A | ||||
| JP2014130920A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Keisuke Kawahara
Toshio Fukui
Mitsutsugu Sugimura
Keisuke Kawahara
Toshio Fukui