Title:
半導体装置
Document Type and Number:
Japanese Patent JP7193371
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor body, first and second electrodes, and first and second control electrodes. The first and second electrodes are provided on the semiconductor body. The first and second control electrodes each include a first portion positioned between the semiconductor body and the first electrode, a second portion positioned between the semiconductor body and the second electrode, and a third portion linked to the first and second portions. The semiconductor body includes first to fourth semiconductor layers. The second semiconductor layer is provided on the first semiconductor layer, and extends along the first to third portions. The fourth semiconductor layer is provided selectively on the second semiconductor layer, and extends along the second and third portions. The fourth semiconductor layer includes second conductivity-type impurities with a higher concentration than a concentration of second conductivity-type impurities in the second semiconductor layer.
Inventors:
Hiroo Kato
Tatsuya Nishiwaki
Kohei Cannabis
Toshifumi Nishiguchi
Tatsuya Nishiwaki
Kohei Cannabis
Toshifumi Nishiguchi
Application Number:
JP2019027471A
Publication Date:
December 20, 2022
Filing Date:
February 19, 2019
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
International Classes:
H01L29/78; H01L29/06; H01L29/41; H01L29/423; H01L29/49
Domestic Patent References:
| JP2018137324A | ||||
| JP2015076414A | ||||
| JP2009224734A | ||||
| JP2017010975A | ||||
| JP2016181618A | ||||
| JP2016152357A |
Attorney, Agent or Firm:
Hyuga Temple Masahiko
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao