Title:
半導体発光素子およびその製造方法
Document Type and Number:
Japanese Patent JP7402962
Kind Code:
B2
Abstract:
A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.
Inventors:
Junpei Yamamoto
Tetsuya Ikuta
Tetsuya Ikuta
Application Number:
JP2022190567A
Publication Date:
December 21, 2023
Filing Date:
November 29, 2022
Export Citation:
Assignee:
DOWA Electronics Co., Ltd.
International Classes:
H01L33/30; H01L33/10; H01L33/40
Domestic Patent References:
| JP4249384A | ||||
| JP2011165800A | ||||
| JP2013251341A | ||||
| JP10116786A | ||||
| JP58071669A | ||||
| JP5190970A | ||||
| JP7111339A | ||||
| JP2004200375A | ||||
| JP2008172210A | ||||
| JP6085239A | ||||
| JP2007227895A |
Foreign References:
| WO1997045881A1 | ||||
| US20100329297 | ||||
| US20070012937 |
Attorney, Agent or Firm:
Kenji Sugimura
Toshio Fukui
Toshio Fukui