Title:
ショットキーバリアダイオード
Document Type and Number:
Japanese Patent JP7415537
Kind Code:
B2
Abstract:
An object of the present invention is to prevent, in a Schottky barrier diode using gallium oxide, dielectric breakdown caused due to misalignment between the trench and the field insulating layer. A Schottky barrier diode includes an anode electrode 40 which is brought into Schottky contact with a drift layer 30, a cathode electrode 50 which is brought into ohmic contact with a semiconductor substrate 20, an insulating film 63 covering the inner wall of a trench 61 formed in the drift layer 30, a metal film 64 covering the inner wall of the trench 61 through the insulating film 63 and electrically connected to the anode electrode 40, and a field insulating layer 70. The field insulating layer 70 includes a first part 71 positioned between an upper surface 31 of the drift layer 30 and the anode electrode 40 and a second part 72 covering the inner wall of the trench 61 through the metal film 64 and insulating film 63. With this configuration, even when misalignment occurs between the trench 61 and the field insulating layer 70, dielectric breakdown can be prevented.
Inventors:
Minoru Fujita
Jun Arima
Katsumi Kawasaki
Jun Hirabayashi
Jun Arima
Katsumi Kawasaki
Jun Hirabayashi
Application Number:
JP2019228555A
Publication Date:
January 17, 2024
Filing Date:
December 18, 2019
Export Citation:
Assignee:
SAE Magnetics(H.K.)Ltd.
International Classes:
H01L29/872; H01L21/329; H01L29/06; H01L29/47
Domestic Patent References:
| JP2015507849A | ||||
| JP2015153769A |
Foreign References:
| WO2019082580A1 | ||||
| US10439075 |
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Ogata Japanese