Title:
【発明の名称】集中イオンビームを使用する金属化学蒸着用の選択エリア核および成長方法
Document Type and Number:
Japanese Patent JPH02504444
Kind Code:
A
Abstract:
A method for depositing metallic lines on an IC chip or mask is described using a focused ion beam (FIB) with a much lower ion dosage than previously required, on the order of 1014-1015 ions/cm2. A substrate is scanned with the FIB to produce a series of nucleation sites on the substrate surface. These nucleation sites can be in an adlayer or can be produced by lattice damage or sputtering directly in the substrate material. The substrate is then exposed to a source gas containing the material to be deposited, while heated to a temperature slightly less than the spontaneous thermal decomposition temperature of the source gas. This results in a well-defined line of materials being deposited from the source gas along the line defined by the nucleation sites. The ratio of the spontaneous activation energy to the autocatalytic activation energy for the gases is preferably at least about an order of magnitude, and the FIB is preferably moved in multiple scans across the desired line. In a particular embodiment both the adlayer and source gas comprise iron pentacarbonyl, an ion dosage of 3x1014 ions/cm2 is used, and the substrate is heated to approximately 130 DEG C. The ion dosage is low enough that the system is compatible with other FIB processes, such as lithography, implantation and sputtering. Applications include the fabrication and repair of both ICs and masks.
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Inventors:
Randall El, Kubena
Meyer, Thomas M
Meyer, Thomas M
Application Number:
JP50645589A
Publication Date:
December 13, 1990
Filing Date:
April 14, 1989
Export Citation:
Assignee:
HIUSE Aircraft Company
International Classes:
C23C16/04; C23C16/48; G03F7/004; H01J37/20; H01J37/28; H01L21/28; H01L21/285; H01L21/30; H01L21/3205; H01L21/768; (IPC1-7): C23C16/04; C23C16/48; H01J37/20; H01J37/28; H01L21/285; H01L21/30; H01L21/3205
Attorney, Agent or Firm:
Takehiko Suzue (3 outside)