Title:
【発明の名称】低ノイズ光検出及びそのための光検出器
Document Type and Number:
Japanese Patent JPH03502148
Kind Code:
A
Abstract:
Relatively weak light signals are detected by a reverse biased photodetector (10, 30, 50, 70) that is a semiconductor diode including a transparent, electrically conductive front contact (24) formed of a thin film of a transparent, electrically conductive oxide, a body (20) of disordered silicon including three layers (21, 22, 23), the outer layers (21, 22) being oppositely doped and the central layer (23) being substantially intrinsic, and a second, rear contact (13) disposed on silicon body (20) opposite the front contact (24), and monitoring changes in the current flowing through the reverse biased diode relative to the dark current of the diode. In order to achieve desired quantum efficiencies in the spectral region from 200-400 nm, the oxide film is less than 50 nm in thickness and most preferably is about 15 to 30 nm in thickness. The photodetection method is particularly effective at elevated temperatures where its noise is significantly less than that of known photodetectors.
Inventors:
Wan Wingo Show Ay
Sabo Louis F
Caesar Gerald P.
Sabo Louis F
Caesar Gerald P.
Application Number:
JP50871788A
Publication Date:
May 16, 1991
Filing Date:
October 13, 1988
Export Citation:
Assignee:
Stem Corporation
International Classes:
H01L31/10; H01L31/0216; H01L31/0224; H01L31/103; H01L31/105; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Minoru Nakamura (7 outside)
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