Japanese Patent JPH0510835

B2

PURPOSE:To improve conversion efficiency, by growing the thin film of a transparent conductor on a substrate as a columnar crystal under the special conditions, and forming irregularities by the apex angles. CONSTITUTION:A transparent electrode 2 comprises the columnar crystal of a transparent conductor, which vertically rises up with respect to a light receiving surface 5. Irregularities in conical shapes are formed by the apex angles of crystal grains on the interface side with an amorphous silicon layer 3. For example, with a glass substrate 1 being heated at 460-470 deg.C, a raw material liquid comprising chlorides of Sn and In and the like is sprayed on the surface of the substrate in an atmosphere. The transparent electrode 2 comprising the thin film of the transparent conductor such as SnO2 is prepared on the substrate 1. At this time, the amount of spray of the raw material liquid per unit hour is adjusted so that the growing speed of the transparent conductor becomes 10-15Angstrom per second. Then, the amorphous silicon layer 3 conprising P, I and N layers is prepared on the transparent electrode 2 by a plasma CVD method. A back surface electrode 4 is prepared thereon by a vacuum evaporation method and the like.

MISHUKU TOSHIO
IIDA HIDEYO

JP9608084A

February 10, 1993

May 14, 1984

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TAIYO YUDEN KK

H01L31/04; H01L31/0236; H01L31/18

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