Title:
【発明の名称】プラズマ・チャンバー内で、無定形水素化シリコンを基板へ付着させる方法
Document Type and Number:
Japanese Patent JPH07105354
Kind Code:
B2
Abstract:
A plasma enclosure (2) containing two electrodes (3 and 4) coupled to a high-frequency generator (5), the substrate (7) being mounted on one of the electrodes. A gas containing at least one silicon compound is introduced into the enclosure and a plasma (8) is created by a radio frequency between the electrodes. The invention is aimed at obtaining a high rate of deposition of semiconductive amorphous silicon on the substrate at the same time as a small number of faults in the deposited film. This objective is obtained by choosing an optimum value of between 30 and 100 MHz/cm for the f/d ratio between the frequency and the distance separating the electrodes, the frequency being between 25 and 150 MHz. At the optimum frequency the rate of deposition is at a maximum and the number of faults is at a minimum. This process can be employed for the deposition of hydrogenated amorphous silicon or of one of its alloys from different gases or gas mixtures, and for producing doped layers.
More Like This:
Inventors:
Herman Caltins
Application Number:
JP24239787A
Publication Date:
November 13, 1995
Filing Date:
September 25, 1987
Export Citation:
Assignee:
Universitti De Neuchatel Institute De Microtechnik
International Classes:
C23C16/30; C23C16/22; C23C16/50; C23C16/509; H01L21/205; H01L31/04; (IPC1-7): H01L21/205
Attorney, Agent or Firm:
Ichiro Sugawara
Previous Patent: Electronic devices, control methods and programs for electronic devices
Next Patent: METHOD AND DEVICE FOR RECOGNIZING PICTURE
Next Patent: METHOD AND DEVICE FOR RECOGNIZING PICTURE