Title:
【発明の名称】超伝導・半導体接合素子
Document Type and Number:
Japanese Patent JPH071806
Kind Code:
B2
Abstract:
PURPOSE:To enable the injected electrons to run at high speed by a method wherein electrode thin film of emitter, base and collector, a substrate and a tunnel barrier are made of materials acceptable for lattice alignment to be epitaxially grown. CONSTITUTION:The title coupler is an element composed of metallic thin film (superconductor or normal conductor) 2, a tunnel barrier 3, a superconductor thin film 4 and a compound semiconductor thin film 5 laminated on an insulating substrate 1. The first metallic thin film 2, the second superconductor thin film 4 and the compound semiconductor thin film 5 are respectively an emitter layer in which quasi-particles are injected, a base layer and a collector layer. Then InAs, unit V and MgO-CdO are respectively used as the narrow gap semiconductor, the superconductor 4 and the insulating substrate 1 or the tunnel barrier to epitaxially grow the overall thin film. Through these procedures, the title superconductor.semiconductor junction device in high transport efficiency to be operated at high speed can be menufactured.
Inventors:
Osamu Michigami
Keiichi Tanabe
Yujiro Kato
Hidefumi Asano
Keiichi Tanabe
Yujiro Kato
Hidefumi Asano
Application Number:
JP11615486A
Publication Date:
January 11, 1995
Filing Date:
May 22, 1986
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L39/22; (IPC1-7): H01L39/22
Attorney, Agent or Firm:
Otsuka Manabu