【発明の名称】集積回路の製造方法 - KONINKL PHILIPS ELECTRONICS NV

Title:

【発明の名称】集積回路の製造方法

Document Type and Number:

Japanese Patent JPH0766959

Kind Code:

B2

Abstract:

Method of making an integrated circuit on a substrate (10) comprising steps for forming a high electron mobility transistor (HEMT), these steps including: - making a stack (11) of layers made on the substrate and among which there is at least one first layer (31) or channel in a material of small forbidden band width, and weakly doped, a second layer (22) or spacer in a material of larger forbidden band width, and weakly doped, and a third layer (23) or donor in a material of large forbidden band width, and strongly doped, these layers being surmounted by a fourth layer (24) or Schottky layer, - making a region of insulation with respect to the other elements of the integrated circuit, right around the transistor. This method also comprises the steps of: - forming, at the surface of the stack of layers, a mask (M) covering and delimiting the active region of the transistor; - etching the stack of layers down to the substrate (10) together with under-etching beneath the mask (M) in order to insulate the active region of the transistor through a MESA; - making a dielectric layer (K) by anisotropic deposition; - directional etching of the dielectric layer (K) whilst preserving the portions of this layer (K) which are protected by the mask (M) by virtue of the under-etching and which are arranged on the flanks of the MESA around the active region of the transistor; - removing the mask (M). Application: digital or analogue integrated circuits including HEMTs.

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Inventors:

SUCHET PHILIPPE (FR)
VINGRIEF JEAN-JACQUES (FR)

Application Number:

JP5818592A

Publication Date:

July 19, 1995

Filing Date:

March 16, 1992

Export Citation:

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Assignee:

KONINKL PHILIPS ELECTRONICS NV (NL)

International Classes:

H01L23/29; H01L21/335; H01L21/338; H01L21/76; H01L23/31; H01L27/095; H01L29/778; H01L29/812; (IPC1-7): H01L27/095; H01L21/338; H01L23/29; H01L23/31; H01L29/778; H01L29/812

Attorney, Agent or Firm:

Akihide Sugimura (5 outside)

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