【発明の名称】赤外線検出素子及び同赤外線検出素子を含む赤外線検出装置

Japanese Patent JPH077845

B2

An intermediate layer made of an Si1-XGeX mixed crystal layer is formed on an Si crystal substrate, where the character X denotes a value in the range of 0 to 1. The intermediate layer is connected to the substrate via a heterojunction generating a first heterojunction barrier. An Si crystal layer is formed on the intermediate layer and is connected to the intermediate layer via a heterojunction generating a second heterojunction barrier. The substrate, the intermediate layer, and the Si layer form a laminated structure. The first and second heterojunction barriers form a charge storage well in an energy band of the intermediate layer. Charges in the well are excited by absorbing infrared light. The intermediate layer contains unevenly-distributed impurities whose concentration montonically varies in a direction along a thickness of the laminated structure. The variation in the concentration generates an internal electric field in the energy band of the intermediate layer. The internal electric field increases a probability of movement of the excited charges from the well into one of the substrate and the Si layer.

Eizo Yamaka
Takashi Moriyama
Koizumi Minsuke

JP6898188A

January 30, 1995

March 23, 1988

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Space Development Agency
International Science Foundation

G01J1/02; H01L27/14; H01L27/148; H01L31/0264; H01L31/10; H01L31/109; (IPC1-7): H01L31/10; H01L27/14

Akira Asamura (3 outside)

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