Title:
【発明の名称】化学気相成長法および化学気相成長装置
Document Type and Number:
Japanese Patent JPH086181
Kind Code:
B2
Abstract:
A silicon oxide film is deposited on a substrate by chemical vapor deposition (CVD) using an organosilicon compound such as tetraethylorthosilicate (TEOS) and ozone as the principal reactants. The organosilicon compound gas and an ozone-oxygen gas which is relatively low in ozone concentration such as 0.1-1% are mixed in a gas mixer outside the CVD reaction chamber, and the resultant gas mixture is fed into the reaction chamber. Separately, another ozone-oxygen gas which is relatively high in ozone concentration such as 1-10% is introduced directly into the reaction chamber so as to come into contact with and mix with the aforementioned gas mixture in the vicinity of the substrate surface. The obtained silicon oxide film is good in film properties and step coverage, and the CVD operation does not suffer from deposition of reaction products in the gas feeding pipes and gas injecting nozzles.
Inventors:
Yasuo Ikeda
Application Number:
JP32097492A
Publication Date:
January 24, 1996
Filing Date:
November 30, 1992
Export Citation:
Assignee:
NEC
International Classes:
C23C16/40; C23C16/44; C23C16/452; C23C16/455; C30B25/12; C30B25/14; H01L21/31; H01L21/316; (IPC1-7): C23C16/44; C23C16/40; C30B25/12; C30B25/14; H01L21/31
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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