Title:
【発明の名称】高低抗炭化ケイ素の製法
Document Type and Number:
Japanese Patent JPH09500861
Kind Code:
A
Abstract:
PCT No. PCT/EP94/02400 Sec. 371 Date Apr. 12, 1996 Sec. 102(e) Date Apr. 12, 1996 PCT Filed Jul. 21, 1994 PCT Pub. No. WO95/04171 PCT Pub. Date Feb. 9, 1995A process for producing high-resistance SiC from low-resistance SiC starting material. The flat (shallow) donor levels of a prevailing nitrogen impurity are overcompensated by admixture of a trivalent doping element with the concentration of the doping element in the SiC being such that it changes the conductivity type from a n-conductivity to a p-conductivity. In addition, a transition element is added having donor levels approximately in the middle of the SiC energy gap, so that the excess acceptor levels are in turn compensated and a high specific resistance is achieved.
Inventors:
Niemann, Eckhard
Schneider, Jürgen
Muller, halalt
Myr, carlin
Schneider, Jürgen
Muller, halalt
Myr, carlin
Application Number:
JP50553495A
Publication Date:
January 28, 1997
Filing Date:
July 21, 1994
Export Citation:
Assignee:
Daimler-Benz Actien Gezel Shaft
Fraunhofer-Gesellschaft-Tru Velderung del Angewanten Forschung A. Fau.
Fraunhofer-Gesellschaft-Tru Velderung del Angewanten Forschung A. Fau.
International Classes:
C30B29/36; C30B23/00; C30B23/02; H01L21/04; H01L21/322; H01L29/161; H01L29/24; H01L29/38; (IPC1-7): C30B29/36; H01L21/322; H01L29/161
Attorney, Agent or Firm:
Toshio Yano (3 outside)