Document Type and Number:
Japanese Patent JPS4869480
Kind Code:
A
Abstract:
In the embodiment is specifically described a method for irradiating a transistor device with radiant rays. The top surface of the semiconductor crystal contained in the transistor device is exposed to the radiant rays so that the radiated energy impinging upon a preselected part of the base region, underneath the emitter electrode, is less than that impinging upon the other parts of the base region. Masking and radiant ray absorptive material are used to facilitate the process. Thereafter, the device and/or crystal is subjected to heat treatment to selectively improve such characteristics of the transistor as amplifying and switching characteristics to produce transistors suitable to a necessity of different applications.
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Application Number:
JP10440371A
Publication Date:
September 20, 1973
Filing Date:
December 22, 1971
Export Citation:
International Classes:
H01L29/73; H01L21/00; H01L21/26; H01L21/322; H01L21/331; H01L29/744; (IPC1-7): H01L29/72