Document Type and Number:
Japanese Patent JPS4914107
Kind Code:
B1
Abstract:
1,243,053. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORP. 13 Jan., 1969 [18 Jan 1968], No. 2791/68. Heading H1K. A semi-conductor device exhibiting a negative resistance effect comprises a body of extrinsic semi-conductor material of a type wherein the minority carriers produce avalanche multiplication at lower electric field strengths than do the majority carriers. Such materials are p-type arsenide and p-type alloys of indium arsenide and gallium arsenide or indium arsenide and indium phosphide. At least two heavily doped electrode regions are formed in the semi-conductor body by diffusion, epitaxy, solution growing or alloying, the largest of them, the cathode, being of the same conductivity type as the semi-conductor body, and another, serving as the anode, being of either conductivity type. The other electrodes, if present, serve as auxiliary electrodes. Zinc or cadmium are used as impurities to form the cathode and tin or tellurium to form the anode. The electrode may have various configurations, Figs. 1-8 and Fig. 9, not shown. The device may be a photoelectric device controlled by a light source.
Application Number:
JP314869A
Publication Date:
April 05, 1974
Filing Date:
January 17, 1969
Export Citation:
International Classes:
H01L29/86; H01L29/00; H01L29/864; H01L47/00; H03K17/72