Document Type and Number:
Japanese Patent JPS4944793
Kind Code:
B1
Abstract:
A semiconductor device, for example, a deep-depletion field effection traNsistor, in which the formation of an inversion layer below an electrode provided on an insulating layer is counteracted by a rectifying contact preferably connected to said electrode, as a result of which minority charge carriers below the electrode layer are removed. As a result of this a depletion zone formed by the electrode potential in a semiconductor layer situated below the electrode can expand without hindrance to influence a current path in the semiconductor layer.
Application Number:
JP5723170A
Publication Date:
November 30, 1974
Filing Date:
July 01, 1970
Export Citation:
International Classes:
H01L21/331; H01L29/78; H01L21/762; H01L21/8249; H01L27/00; H01L27/06; H01L29/00; H01L29/73; (IPC1-7): H01L11/14