Document Type and Number:
Japanese Patent JPS5724033
Kind Code:
B2
Abstract:
This invention relates to a high power bipolar transistor comprising a collector region, a base region formed in the collector region and emitter regions formed in the base region, with each of the emitter regions being a closed loop at the surface of the base region. The emitter electrode contact region is arranged at the surface of base region and surrounded by the emitter region, and the emitter electrode contact region and emitter region are connected by a conductive area, with the conductive area being shallower than the emitter region. In addition, the conductive area is connected to the internal surface of the emitter region at one or more points but is not connected to the entire part of the internal surface of the emitter region.
Application Number:
JP12892776A
Publication Date:
May 21, 1982
Filing Date:
October 27, 1976
Export Citation:
International Classes:
H01L21/331; H01L29/08; H01L29/417; H01L29/73