PURPOSE: To enhance dark specific resistance, by using a photoconductive layer containing amorphous silicon as a main component, and as the other components, H, B, further, O, N, and C.

CONSTITUTION: A substrate is heated to a prescribed temp. in a reaction chamber evacuated to vacuum, and a gaseous mixture of silane SiH4 and at least one of rare gases of He and Ne; a reactive gas contg. at least one of O, N, and C in the chemical formula, or a gaseous mixture of this reactive gas and said rare gas; and biborane or a gaseous mixture of diborane and said rare gas are introduced into the reaction chamber, and plasma glow discharge is executed in the chamber to manufacture a desired photoreceptor.