PURPOSE: To easily obtain a high withstand semiconductor IC, by using an N type high impurity density diffused layer reaching a high density N type impurity buried layer as a channel stopper diffused layer.
CONSTITUTION: A cut 10 is provided at a part of an N type high impurity layer (N+ collector punched diffused layer) 9 reaching an N type high density impurity layer (N+ collector buried layer) 2 so as to surrounded an emitter region 5 and a base region 4, and emitter and base wirings 8' and 8 are provided via an insulation film 7 so as to pass over the cut 10. The gap between the collector electrode 11 and the wiring 8 on the side close thereto is set at a larger value either of a discharge gap or more determined by the maximum voltage of the circuit or the minimum value obtained in a photo resist process, and the N type high density impurity region 9 is not allowed to come under the wirings 8 and 8'.
KIMURA MASATOSHI
OCHI SHIKAYUKI
