Title:
MANUFACTURE OF SURFACE LUMINESCENCE TYPE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPS58137273
Kind Code:
A
Abstract:
PURPOSE:To reduce contact resistance between an electrode and a clad layer by exposing an n-GaAs contact layer 22 and using a thin uniform layers as the n- GaAs contact layer 22. CONSTITUTION:An n-Ga1-zAlzAs layer 21, the n-GaAs contact layer 22, an n- Ga1-xAlxAs clad layer 2, an n or p-Ga1-yAlyAs active layer 3, the n-Ga1-xAlx As clad layer 4 and a p-Ga1-wAlwAs contact layer 5 are grown onto an n- GaAs substrate 1 in succession in an epitaxial manner. The n-GaAs substrate 1 is removed completely. The n-Ga1-zAlzAs layer 21 is removed, and the n-GaAs contact layer 22 is exposed. The thickness of the n-GaAs contact layer 22 is made comparatively thin.
Inventors:
OKUDA HIROSHI
OOTANI SHIYUNJI
SASAYA YUKIHIRO
NISHIZAWA HIDEAKI
OOTANI SHIYUNJI
SASAYA YUKIHIRO
NISHIZAWA HIDEAKI
Application Number:
JP2049382A
Publication Date:
August 15, 1983
Filing Date:
February 09, 1982
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L33/14; H01L33/20; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Tetsuji Ueshiro