Title:
LATERAL EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPS58147024
Kind Code:
A
Abstract:
PURPOSE:To realize lateral epitaxial growth without largely changing the condition in substrate by effectively and equally heating a strip form region, which is parallel and adjacent to the strip form region in the plane being effectively and equally heated by a first heater, with a second heater. CONSTITUTION:A stick type heater 12 for preheating is provided in parallel to a stick type main heater 11 for additional heating and a polycrystalline Si layer 2 is heated preceding the movement of fusible strip form region. Since a region to be heated by the heater 12 has a reasonable width, the region preheated up to a considerable high temperature is heated additionally by the successive main heater 11. Accordingly, the single crystallization can be realized by comparatively quick scanning. Meanwhile, temperature rise of substrate is determined by the heating time of a pair of heaters, without resulting in breakdown of elements formed in the substrate and large scale change of characteristics.
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Inventors:
SAKURAI JIYUNJI
Application Number:
JP2841982A
Publication Date:
September 01, 1983
Filing Date:
February 24, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/18; H01L21/20; H01L21/26; H01L21/263; H01L21/268; H01L21/324; (IPC1-7): H01L21/263
Domestic Patent References:
| JPS56142630A | 1981-11-07 |
Attorney, Agent or Firm:
Sadaichi Igita