Title:
RADIATION ENERGY DETECTOR
Document Type and Number:
Japanese Patent JPS58154278
Kind Code:
A
Abstract:
A high speed PIN photodetector having high efficiency in the 900nm wavelength region consists of a parallel-sided web (2<1>) of silicon disposed obliquely between a parallel pair of strips (7) of silicon dioxide, opposite surface layers (3, 4) of the web being of different conductivity types and supporting contiguous radiation reflecting electrodes (5, 6). Radiation may be detected through one or both of the strips (3, 4) of silicon dioxide or alternatively the radiation may be coupled to an end of the web via an optical fibre (23). The web of silicon may be formed by anisotropically etching V-grooves in both sides of a silicon substrate.
Inventors:
FURANKU FUYU FUANGU
HIYUUGO KAARU SEITSU
HIYUUGO KAARU SEITSU
Application Number:
JP21848782A
Publication Date:
September 13, 1983
Filing Date:
December 15, 1982
Export Citation:
Assignee:
IBM
International Classes:
H01L31/10; G02B6/42; H01L31/0232; H01L31/0352; H01L31/105; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Tsukio Okada