Title:
PHOTOVOLTAIC FORCE GENERATING DEVICE
Document Type and Number:
Japanese Patent JPS58175875
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of a short-circuit trouble caused by the end part of a P type amorphous Si layer coming into direct contact with the extended part of the second electrode by a method wherein the end part of said P type amorphous Si layer is covered by an I-type amorphous Si layer 4b of high resistivity. CONSTITUTION:The end part 4as of the P type amorphous Si layer 4a is covered by the I-type amorphous Si layer 4b of high resistivity. As a result, the generation of the short-circuit trouble, caused by the end part 4as of the P type amorphous Si layer 4a of low resistivity coming into direct contact with the extended part of the second electrode 6, can be prevented. Besides, as the N type amorphous Si layer 4c of low resistivity located on a photoelectromotive force unit 2 is extended and directly contacted with the end part 5a of the first electrode 5 located on a photoelectromotive force unit 3, the electric resistance value of the series connected part located between the adjoining photoelectromotive force units 2 and 3 can be lowered as compared with the case wherein only the electrode 6 exists.
Inventors:
MAEKAWA KENJI
TAKEUCHI YUKIHISA
MORI MASAAKI
NISHIZAWA TOSHIAKI
TAKEUCHI YUKIHISA
MORI MASAAKI
NISHIZAWA TOSHIAKI
Application Number:
JP5849482A
Publication Date:
October 15, 1983
Filing Date:
April 08, 1982
Export Citation:
Assignee:
NIPPON DENSO CO
International Classes:
H01L31/04; H01L27/14; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Hideto Asamura