Document Type and Number:
Japanese Patent JPS6240871
Kind Code:
B2
Abstract:
PURPOSE:To remove the short-circuit effect of the pinhole through the pinhole thereof, and to contrive to enhance the function of the device and to enhance manufacturing yield by a method wherein the pinhole of a semiconductor layer, etc., is filled up utilizing exposure of a resist and hardening technique thereof. CONSTITUTION:A mesa film or a thin metal film 2 is deposited on a glass substrate 1. Then the semiconductor layer 3 is formed on the film 2. The photo resist 5 is applied on the semiconductor layer 3 having the pinhole 4, and the resist 5 is filled up in the pinhole 4. Then exposure is applied in the direction shown with the arrow marks through the film 2. After exposure is completed, when development, rinse and baking of the photo resist are performed, the resist 5 is filled up in the pinhole 4, and at the same time, the resist 5 is left on the upper part of the pinhole part 4, and are hardened. Then a conductive film 6 is formed on the layer 3 and the resist 5. Accordingly, the short-circuit effect through the pinhole is removed.
Inventors:
IIDA AKIMI
Application Number:
JP14598782A
Publication Date:
August 31, 1987
Filing Date:
August 23, 1982
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L31/04; H01L31/18
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