Title:
【発明の名称】電界効果トランジスタ電流源
Document Type and Number:
Japanese Patent JPS62500327
Kind Code:
A
Abstract:
A field effect transistor circuit generates a reference current that can obtain a desired temperature coefficient. The circuit is self-compensatory with respect to process variations, in that a "slow" process will produce a higher than normal current, while a "fast" process will give a lower one. This results in a tight spread of slew-rate, gain, gain-bandwidth, etc. in opamps, comparators, and other linear circuits. A simple adjustment in the circuit allows the temperature coefficient to be made positive or negative if so desired. An illustrative circuit is shown for CMOS technology, but can be applied to other field effect technologies.
Inventors:
Morris, Bernard Lee
Nagii, Jefrey Jei
Lawrence, Arthur Walter
Nagii, Jefrey Jei
Lawrence, Arthur Walter
Application Number:
JP50418285A
Publication Date:
February 05, 1987
Filing Date:
September 18, 1985
Export Citation:
Assignee:
American Telefon and Telegraph Kampani-
International Classes:
G05F3/24; G05F3/26; (IPC1-7): G05F3/24
Domestic Patent References:
| JP59092910B |
Attorney, Agent or Firm:
Masao Okabe